InGaAsの熱物理学的性質
| Autor: | Matsumoto, Satoshi, Yuge, Sadayoshi, Hayashi, Yoshio, Seino, Yu, Itami, Toshio, Kinoshita, Kyoichi |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2002 |
| Předmět: |
温度依存性
半導体材料 InGaAs 粘度 結晶成長 オプトエレクトロニクス装置 thermal diffusivity 温度勾配 crystal growth compositional homogeneity double crucible method temperature gradient semiconductor material thermophysical property 組成均一性 viscosity 化学組成 chemical composition 2重るつぼ法 熱物理学的性質 temperature dependence 熱拡散係数 optoelectronic device |
| Zdroj: | 宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs)-Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (I[lc]nG[lc]aA[lc]s)-Growth of Homogeneous Crystals. :55-60 |
| ISSN: | 1345-7888 |
| Popis: | The viscosity and thermal diffusivity of In(x)Ga(1-x)As with various compositions has been measured up to 1,500 K. The double crucible method and its availabilities to measure the high vaporizing materials on both measurement could be verified. The thermophysical data of In(x)Ga(1-x)As (x = 0.3, 0.5, and 0.8) could be obtained for the first time. The temperature dependence of viscosity of molten In(0.8)Ga(0.2)As was expressed as eta(T) = 0.213 exp(1.85 x 10(exp 3)/T) (mPa s) by an oscillating cup method. The thermal diffusivity of molten In(0.8)Ga(0.2)As was 11 mm(sup 2)/s at 1,313 K and that of solid was 1.8 mm(sup 2)/s at 1,273 K by a laser flush method. 資料番号: AA0045402004 レポート番号: NASDA-TMR-020024E |
| Databáze: | OpenAIRE |
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