| Popis: |
A novel ferromagnetic tunnel junction with transition metal oxides has been fabricated with photo-lithographic technique. Well defined tunneling properties were observed in a novel barrier material of TiO_x with the thickness down to 2 nm. Spin dependent transport properties have been confirmed for Fe_3O_4/ TiO_x/M (M =Co, Co/NiFe, NiFe) tunnel junctions, where highest magneto-resistance (MR) change of 7% was observed for Co. Drastic improvement of field sensitivity was attained with the exchange coupled Co/NiFe bi-layer. |
