| Autor: |
P. Anderson, Christopher, Bourassa, Alexandre, C. Miao, Kevin, Wolfowicz, Gary, J. Mintun, Peter, L. Crook, Alexander, Abe, Hiroshi, Ul Hassan, Jawad, T. Son, Nguyen, Ohshima, Takeshi, D. Awschalom, David, Hiroshi, Abe, Takeshi, Ohshima |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Zdroj: |
Science. 366:1225-1230 |
| ISSN: |
0036-8075 |
| Popis: |
Spin defects in silicon carbide have the advantage of exceptional electron spin coherence combined with a near-infrared spin-photon interface, all in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we integrated highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricated diodes to modulate the local electrical environment of the defects. These devices enable deterministic charge-state control and broad Stark-shift tuning exceeding 850 gigahertz. We show that charge depletion results in a narrowing of the optical linewidths by more than 50-fold, approaching the lifetime limit. These results demonstrate a method for mitigating the ubiquitous problem of spectral diffusion in solid-state emitters by engineering the electrical environment while using classical semiconductor devices to control scalable, spin-based quantum systems. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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