| Autor: |
Sumiya, Masatomo, Ohnishi, Tsuyoshi, Tanaka, Katsuji, Ohtomo, Akira, Kawasaki, Masashi, KOINUMA, HIDEOMI, Ohtsuka, Kohji, Fuke, Shunro |
| Jazyk: |
angličtina |
| Rok vydání: |
1999 |
| Zdroj: |
MRS Internet Journal of Nitride Semiconductor Research. 4(No. Suppl. 1) |
| ISSN: |
1092-5783 |
| Popis: |
Suppl. 1 Control of the polarity of GaN films deposited by metalorganic chemical vapor deposition was achieved by substrate nitridation and subsequent annealing of a buffer layer. The surface morphology and optical properties of 1.2 mu m GaN films were influenced by the different growth mode due to the polar direction. Coaxial impact collision ion scattering spectroscopy revealed that the polarity composition of a buffer layer on nitrided sapphire varied by annealing in a H-2 atmosphere. It was considered that the systematic variation of the surface morphology was caused by the polarity composition of the buffer layer. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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