| Autor: |
Nakashi, Kenichi, Taki, Hideo, Kudou, Yousuke, Taniguchi, Kenji |
| Jazyk: |
angličtina |
| Rok vydání: |
1997 |
| Předmět: |
|
| Zdroj: |
九州大学大学院システム情報科学紀要. 2(1):47-52 |
| ISSN: |
1342-3819 |
| Popis: |
This paper describes low-power and high-speed RTD/HEMT (Resonant Tunneling Diode / High-Electron Mobility Transistor) logic circuits. In order to estimate RTD/HEMT logic gates using ordinary GaAs/A1GaAs HEMT in detail by using real device parameters extracted from measured values, we have examined their characteristics. Fundamental characteristics of logic gates are examined and compared with resistor-load and depletion-mode HEMT (D-HEMT) load inverters. The results show that RTD/HEMT inverter is the fastest among them. Their application to functional circuits such as phase comparator (PC) and voltage controlled oscillator(VCO) used in PLL are also described. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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