Wurtzite AlP y N1-y : a new III-V compound semiconductor lattice-matched to GaN (0001)
| Autor: | Pristovsek, Markus, van Dinh, Duc, Liu, Ting, Ikarashi, Nobuyuki |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Zdroj: | Applied Physics Express. 13(11):111001 |
| ISSN: | 1882-0778 |
| Popis: | We report on a new member of the III-nitride family, wurtzite AlPyN1−y, tensile strained, or lattice matching (at ≈10.6% P) on (0001) GaN. Unlike lattice-matched AlInN, AlPyN1−y can be grown between 1050 °C to 1250 °C under hydrogen atmosphere in metal-organic vapor phase epitaxy. The transition from GaN to AlPyN1−y is sharp, there is no Ga carry over. Due to the small P content, physical properties like bandgap (around 5.5 eV for lattice match), dielectric function, or polarisation are close to AlN. A first unoptimized AlPN/GaN heterostructure shows a low sheet resistance of 150±50Ω/□, which makes AlPyN1−y promising for electronic applications. ファイル公開：2021-11-01 |
| Databáze: | OpenAIRE |
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