| Autor: |
Sato, Kazuki, Nishimura, Tomoaki, Kuriyama, Kazuo, Nakamura, Tohru |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
法政大学イオンビーム工学研究所報告 = Report of Research Center of Ion Beam Technology, Hosei University. 40:28-30 |
| ISSN: |
0286-0201 |
| Popis: |
In RBS channeling experiments, the slight de-channeling phenomenon of Ga was observed from the depth of about 250 nm in depth behind the surface peak in un-annealed GaN single crystal wafers. In ERDA experiments using 1.8 MeV He^4+ beam, the hydrogen concentration (4.8 x 10^14 cm^-2) in un-annealed GaN was about the twice of that in 900 oC annealed one, suggesting that part of the residual hydrogen was out diffused by annealing. The existence of the minute displacement of Ga in un-annealed GaN was associated with the Ga displacement arising from the complex defect of the residual hydrogen and Ga. This phenomenon corresponds to the appreciable relaxation of Ga atoms toward H proposed by Myer et al. The slight de-channeling phenomena of the Ga atom observed in the RBS channeling experiment disappeared in association with the reduction of hydrogen due to out diffusion of hydrogen in the annealed wafer. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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