Evaluation of SiC Power Diodes against Terrestrial Neutron-Induced Failure at Ground Level
| Autor: | Asai, Hiroaki, Sugimoto, Kenji, Nashiyama, Isamu, Shiba, Kensuke, Matsuda, Mieko, Morimura, Tadaaki |
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| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: | |
| Zdroj: | 宇宙航空研究開発機構特別資料 = JAXA Special Publication. :162-165 |
| ISSN: | 1349-113X |
| Popis: | Terrestrial neutrons cause single-event effects (SEEs) in semiconductor devices, which crucially affect the reliability of electronic systems used in the terrestrial environment. This paper presents evaluation results of high energy neutron-induced single-event burnout (SEB) in silicon carbide (SiC) power diodes and differences between SiC and silicon (Si) devices from the SEB standpoint. 形態: カラー図版あり Physical characteristics: Original contains color illustrations 資料番号: AA0061889035 レポート番号: JAXA-SP-12-008E |
| Databáze: | OpenAIRE |
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