埋め浴みチャネルMOSキャパシタの高周波C-V特性
| Přispěvatelé: | 福山大学工学部電子・電気工学科, Department of Electronic and Electrical Engineering, Faculty of Engineering, Fukuyama University |
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| Jazyk: | japonština |
| Rok vydání: | 2003 |
| Předmět: |
ポアソン方程式
埋め込みチャネルMOSキャパシタ 正孔再分布 Hardware_PERFORMANCEANDRELIABILITY Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Poisson equation Computer Science::Other buried-channel MOS capacitor C-V特性 Hardware_GENERAL Hardware_INTEGRATEDCIRCUITS hole redistribution C-V characteristics Hardware_LOGICDESIGN |
| Zdroj: | 福山大学工学部紀要. 27:21-28 |
| Popis: | High-frequency capacitance-voltage (C-V) characteristics of a buried-channel, MOS capacitor have been analyzed. High-frequency capacitance of a buried-channel MOS capacitor that has a player at the surface of n substrate reaches a minimum value and then slightly increases to saturate in the inversion region. Poisson equation is solved numerically including hole redistribution effect by the gate-voltage change for the measurement signal. The result quantitatively explains the existence of capacitance minimum which is peculiar to a buried-channel MOS capacitor. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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