Etching of Diamond and Plasma Parameters in O2/CF4 Plasma
| Autor: | Misu, Takayuki, Goto, Miki, Arai, Toshihiko |
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| Jazyk: | japonština |
| Rok vydání: | 2004 |
| Předmět: | |
| Zdroj: | 神奈川工科大学研究報告.B,理工学編. 28:55-58 |
| ISSN: | 0916-1902 |
| Popis: | application/pdf Diamond films were etched using a reactive ion etching system in O2/CF4 plasma with narrow electrode gap. The maximum etching rate was obtained with the addition of 20%CF4 in O2 under conditions that the RF power was 100W, the gas pressure 20Pa and the total flow rate 20sccm. Langmuir probe and actinometry technique were used to detennine the plasma parameter. The electron temperature and O density had a peak around O2/20%CF4 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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