Gamma-Ray Irradiation Effects on Ga2O3 MOSFETs
| Autor: | Hoi, Wong Man, Sasaki, Kohei, Kuramata, Akito, Yamakoshi, Shigenobu |
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| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Popis: | The high-voltage and high-temperature capabilities of Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) are expected to find applications in extreme radiation environments. This paper reports the first investigation into the effects of ionizing radiation on Ga2O3 MOSFETs. The devices remained fully functional after exposure to a cumulative gamma-ray (γ-ray) dose of 1 MGy(SiO2). High γ-ray tolerance was demonstrated for the bulk Ga2O3 channel by virtue of the MOSFETs’ stable DC output characteristics against irradiation. Radiation-induced degradations in the gate insulation and surface passivation were found to limit the overall radiation resistance of these devices. 第78回応用物理学会秋季学術講演会 |
| Databáze: | OpenAIRE |
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