| Autor: |
Deng, Tianguo, Gotoh, Kazuhiro, Takabe, Ryota, Xu, Zhihao, Yachi, Suguru, Yamashita, Yudai, Toko, Kaoru, Usami, Noritaka, Suemasu, Takashi |
| Jazyk: |
angličtina |
| Rok vydání: |
2017 |
| Zdroj: |
Journal of crystal growth. 475:186-191 |
| ISSN: |
0022-0248 |
| Popis: |
BaSi2 films were fabricated on textured Si(0 0 1) substrates that consisted of {1 1 1} facets using molecular beam epitaxy. The light-trapping effect of these films and their performance when incorporated into solar cells were measured. X-ray diffraction and reflectivity measurements showed that the BaSi2 films were grown epitaxially on the textured Si(0 0 1) substrate and confirmed the light-trapping effect. The critical thickness over which BaSi2 relaxes increased from approximately 50 to 100 nm when comparing the BaSi2 films on a flat Si(1 1 1) substrate and the textured substrate, respectively. p-BaSi2/n-Si solar cells were fabricated with varying BaSi2 layer thickness and with hole concentrations in the range between 2.0 × 1018 and 4.6 × 1018 cm−3. These cells exhibited a maximum energy conversion efficiency of 4.62% with an open-circuit voltage of 0.30 V and a short-circuit current density of 27.6 mA/cm2 when the p-BaSi2 layer was 75 nm-thick. These results indicated that the use of BaSi2 films on textured Si(0 0 1) substrates in solar cells shows great promise. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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