Improvement of Write Efficiency in Voltage-Controlled Spintronic Memory by development of a Ta-B Spin Hall Electrode

Autor: Y, Kato, Y, Saito, H, Yoda, T, Inokuchi, S, Shirotori, N, Shimomura, S, Oikawa, A, Tiwari, M, Ishikawa, M, Shimizu, B, Altansargai, H, Sugiyama, K, Koi, Y, Ohsawa, A, Kurobe
Jazyk: angličtina
Rok vydání: 2018
Zdroj: Physical Review Applied. 10(044011):1-11
ISSN: 2331-7019
Databáze: OpenAIRE