| Autor: |
MCGLONE, JF, XIA, ZB, ZHANG, YW, JOISHI, C, LODHA, S, RAJAN, S, RINGEL, SA, AREHART, AR |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
IndraStra Global. |
| ISSN: |
2381-3652 |
| Popis: |
Threshold voltage instability was observed on beta-Ga2O3 transistors using double-pulsed current-voltage and constant drain current deep level transient spectroscopy (DLTS) measurements. A total instability of 0.78 V was attributed to two distinct trap levels, at E-C-0.70 and E-C-0.77 eV, which need to be mitigated for future applications. The traps are likely located near the gate-drain edge and below the delta-doped layer, which is determined through the DLTS technique and an understanding of the fill and empty biasing conditions. The trap modulation was consistent with a gate leakage-based trap filling mechanism, which was demonstrated. It is likely that Fe is playing a role in the observed dispersion due to the close proximity of the Fe substrate. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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