| Autor: |
JOISHI, C, RAFIQUE, S, XIA, ZB, HAN, L, KRISHNAMOORTHY, S, ZHANG, YW, LODHA, S, ZHAO, HP, RAJAN, S |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
IndraStra Global. |
| ISSN: |
2381-3652 |
| Popis: |
We report (010)-oriented beta-Ga2O3 bevel-field-plated mesa Schottky barrier diodes grown by low-pressure chemical vapor deposition (LPCVD) using a solid Ga precursor and O-2 and SiCl4 sources. Schottky diodes with good ideality and low reverse leakage were realized on the epitaxial material. Edge termination using beveled field plates yielded a breakdown voltage of -190V, and maximum vertical electric fields of 4.2MV/cm in the center and 5.9MV/cm at the edge were estimated, with extrinsic R-ON of 3.9m Omega.cm(2) and extracted intrinsic R-ON of 0.023m Omega.cm(2). The reported results demonstrate the high quality of homoepitaxial LPCVD-grown beta-Ga2O3 thin films for vertical power electronics applications, and show that this growth method is promising for future beta-Ga2O3 technology. (C) 2018 The Japan Society of Applied Physics |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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