| Autor: |
Chandra, Jagadeesh SV, Chandrasekhar, M, Rao, Mohan G, Uthanna, S |
| Jazyk: |
angličtina |
| Rok vydání: |
2009 |
| Předmět: |
|
| Zdroj: |
IndraStra Global. |
| ISSN: |
2381-3652 |
| Popis: |
Tantalum oxide (Ta2O5) films were formed on silicon (111) and quartz substrates by dc reactive magnetron sputtering of tantalum target in the presence of oxygen and argon gases mixture. The influence of substrate bias voltage on the chemical binding configuration, structural, electrical and optical properties was investigated. The unbiased films were amorphous in nature. As the substrate bias voltage increased to -50 V the films were transformed into polycrystalline. Further increase of substrate bias voltage to -200 V the crystallinity of the films increased. Electrical characteristics of Al/Ta2O5/Si structured films deposited at different substrate bias voltages in the range from 0 to -200 V were studied. The substrate bias voltage reduced the leakage current density and increased the dielectric constant. The optical transmittance of the films increased with the increase of substrate bias voltage. The unbiased films showed an optical band gap of 4.44 eV and the refractive index of 1.89. When the substrate bias voltage increased to -200 V the optical band gap and refractive index increased to 4.50 eV and 2.14, respectively due to the improvement in the crystallinity and packing density of the films. The crystallization due to the applied voltage was attributed to the interaction of the positive ions in plasma with the growing film. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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