Low-power switched transconductance mixer and LNA design for Wi-Fi and WiMAX applications in 65nm CMOS
| Autor: | BHATT, D, MUKHERJEE, J, REDOUTE, JM |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
WiMAX
power 4 low-power switched transconductance mixer LOW-VOLTAGE CMOS LNA design low noise amplifiers CMOS integrated circuits split-load inductive technique BULK-INJECTION noise figure 10 dB I/Q-MIXER NOISE 8 mW fully differential complementary metal oxide semiconductor mixers (circuits) widewide-band low-power low-noise amplifier size 65 nm frequency 1 GHz to 10 GHz TECHNOLOGY 0.18-MU-M CMOS RECEIVER 2 V Wi-Fi voltage 1 |
| Zdroj: | IndraStra Global. |
| ISSN: | 2381-3652 |
| Popis: | This study proposes a wide-band low-power low-noise amplifier (LNA) and switched transconductance (SwGm) mixer. The proposed mixer is realised with a fully differential complementary metal oxide semiconductor (CMOS) SwGm configuration. It provides a high bandwidth with a low noise figure (NF) and consumes a low amount of power. Moreover, an ultra-wideband LNA is designed by using a split-load inductive technique. The combination of the LNA and the mixer has provided competitive results in terms of power, bandwidth, NF, and gain. The LNA+mixer was designed and fabricated in the 65nm radio frequency-CMOS technology. The proposed LNA achieves 2.5 +/- 0.1dB of NF and 17 +/- 1.5dB of gain over the band of 1-10GHz and consumes 4.8mW of power. The proposed SwGm mixer shows a maximum conversion gain (CG) of 10dB, a minimum NF of 10dB, and more than -8.5dBm of third-order input intercept point (IIP3) over the band of 10GHz. The implemented LNA+mixer achieves 19dB of CG, 5dB of NF, and -6dBm of IIP3. The on-chip LNA and mixer consume only 1.65mW and 530W, respectively, from a 1.2V supply voltage. |
| Databáze: | OpenAIRE |
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