| Autor: |
Dhananjay,, Nagaraju, J, Choudhury, PR, Krupanidhi2, SB |
| Jazyk: |
angličtina |
| Rok vydání: |
2006 |
| Předmět: |
|
| Zdroj: |
IndraStra Global. |
| ISSN: |
2381-3652 |
| Popis: |
A metal-ferroelectric-semiconductor structure has been developed by depositing Li-doped ZnO thin films (Zn1-xLixO, x = 0.25) on p-type Si substrates by the pulsed laser ablation technique. (002) preferential oriented films were deposited at a low growth temperature of 500 degrees C and 100 mTorr oxygen partial pressure. The dielectric response of the films has been studied over a temperature range 250-373 K. A dielectric anomaly was observed at 360 K. The capacitance-voltage characteristics of Ag/Zn0.75Li0.25O/Si exhibited clockwise hysteresis loops with a memory window of 2V. The films deposited at 100 mTorr pressure show a stable current density and a saturated polarization hysteresis loop with a remanent polarization of 0.09 mu C cm(-2) and coercive field of 25 kV cm(-1). Leakage current measurements were done at elevated temperatures to provide evidence of the conduction mechanism present in these films. Ohmic behaviour was observed at low voltage, while higher voltages induced a bulk space charge. The optical properties of Zn0.75Li0.25O thin films were studied in the wavelength range 300-900 nm. The appearance of ferroelectric nature in Li-doped ZnO films adds an additional dimension to its applications. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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