| Popis: |
The invention relates to a device and method for the deposition of, in particular, crystalline layers on one or several, in particular, equally crystalline substrates in a process chamber (1), by means of reaction gases which are fed to the process chamber where they react pyrolytically. The process chamber (1) has a first wall (3) and a second wall (4), lying opposite the first. The first wall is provided with at least one heated substrate holder (45), to which at least one reaction gas is led by means of a gas inlet device (6). According to the invention, a premature decomposition of source gases and a local oversaturation of the gas flow with decomposition products may be avoided, whereby the gas inlet device (1) is liquid cooled. |
