Characterization and AlN cooling of thermally isolated bipolar transistors
| Jazyk: | angličtina |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
safe operating area
thermal coupling thermal instability thermal resistance self-heating ballasting resistor electrothermal effects aluminum nitride (AlN) heterojunction bipolar transistor (HBT) bipolar junction transistor (BJT) silicon-on-glass (SOG) multifinger device heatspreaders mutual thermal resistance |
| Popis: | Nowadays, electrothermal effects (ET) are posing fundamental issues in nearly all branches of micro- and nano-electronics. Due to either a high power dissipation level or to the aggressive electrical isolation schemes adopted to increase the speed, both high and low power devices are affected by ET effects that limit their reliability and cause device and circuit failures. In addition, the continuous trend towards miniaturization and increased device integration levels are both elements that aggravate the matter. Therefore, ET effects have to be taken into account in many electronic arenas from power applications such as in the automotive, traction motor, home and wind power markets, to high-speed applications such as wireless systems, communications, and radar where bipolar technologies are widely used. The work reported in this thesis is devoted to enhancing the thermal management of bipolar IC’s by improving the understanding, and associated modeling, of ET effects and by investigating the potential cooling of the devices and circuits with aluminum nitride (AlN) heatspreaders. Layers of AlN have been integrated close to the active region of the transistors thus a very significant reduction of their operating temperature has been achieved. This approach is beneficial for reducing the presence of possible hot spots in high-speed devices and for improving the efficiency of any other cooling solution taken at a circuit, packaging, or system level. Although AlN has long been known to be a dielectric material with good thermal properties, this is the first time that an effective integration of AlN thin-films directly into the device structure of radio-frequency transistors has been demonstrated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|