Temperature dependence of atomic ordering and composition modulation in InAsSbBi grown by molecular beam epitaxy on GaSb substrates
| Autor: | Preston T. Webster, Shane Johnson, Stephen T. Schaefer, M. S. Milosavljevic, R. R. Kosireddy |
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| Rok vydání: | 2021 |
| Předmět: |
Diffraction
Materials science Photoluminescence business.industry Mechanical Engineering Metals and Alloys Analytical chemistry 02 engineering and technology Microstructure 010402 general chemistry 021001 nanoscience & nanotechnology Mole fraction 01 natural sciences 0104 chemical sciences Crystal Semiconductor Mechanics of Materials Transmission electron microscopy X-ray crystallography Materials Chemistry 0210 nano-technology Spectroscopy business Molecular beam epitaxy |
| Zdroj: | Journal of Alloys and Compounds. 859:157860 |
| ISSN: | 0925-8388 |
| Popis: | The structural and optical properties of two 210 nm thick InAsSbBi epilayers grown on (100) GaSb substrates by molecular beam epitaxy at 400 and 280 °C are investigated using X-ray diffraction, Rutherford backscattering spectroscopy, transmission electron microscopy, and photoluminescence spectroscopy. Both samples are free of observable defects. The higher temperature growth results in reduced Bi incorporation, good optical performance, smooth interfaces, and lateral composition modulation of the Bi mole fraction. The lower temperature growth results in near unity Bi incorporation, poor optical performance, interface roughness, and CuPtB -type atomic ordering on the {111}B planes. |
| Databáze: | OpenAIRE |
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