A foundation for complex oxide electronics -low temperature perovskite epitaxy
| Autor: | Helmer Fjellvåg, Jon E. Bratvold, Henrik Hovde Sønsteby, Øystein Fjellvåg, Erik Skaar, Ola Nilsen |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials for devices
Complex oxide Materials science Silicon Electronic materials Annealing (metallurgy) Science General Physics and Astronomy chemistry.chemical_element Nanotechnology 02 engineering and technology 010402 general chemistry Epitaxy 01 natural sciences Article General Biochemistry Genetics and Molecular Biology Atomic layer deposition Electrical resistivity and conductivity Electronic devices Electronics Thin film lcsh:Science Multidisciplinary General Chemistry 021001 nanoscience & nanotechnology 0104 chemical sciences chemistry lcsh:Q 0210 nano-technology |
| Zdroj: | Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020) Nature Communications |
| ISSN: | 2041-1723 |
| Popis: | As traditional silicon technology is moving fast towards its fundamental limits, all-oxide electronics is emerging as a challenger offering principally different electronic behavior and switching mechanisms. This technology can be utilized to fabricate devices with enhanced and exotic functionality. One of the challenges for integration of complex oxides in electronics is the availability of appreciable low-temperature synthesis routes. Herein we provide a fundamental extension of the materials toolbox for oxide electronics by reporting a facile route for deposition of highly electrically conductive thin films of LaNiO3 by atomic layer deposition at low temperatures. The films grow epitaxial on SrTiO3 and LaAlO3 as deposited at 225 °C, with no annealing required to obtain the attractive electronic properties. The films exhibit resistivity below 100 µΩ cm with carrier densities as high as 3.6 · 1022 cm−3. This marks an important step in the realization of all-oxide electronics for emerging technological devices. Designing complex oxides with appreciable low-temperature synthesis remains a challenge. Here, the authors demonstrate an atomic layer deposition process for LaNiO3 to enable epitaxial thin films on LaAlO3 and SrTiO3 substrates deposited at 225 °C, with no annealing required to achieve good electronic properties. |
| Databáze: | OpenAIRE |
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