Ultra-thin oxide breakdown for OTP development in power technologies
| Autor: | Mirko Bernardoni, Andrea Baschirotto, Paolo Del Croce, Osvaldo Gasparri |
|---|---|
| Přispěvatelé: | Gasparri, O, Bernardoni, M, Del Croce, P, Baschirotto, A |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
oxide breakdown OTP Oxide 1/E model 02 engineering and technology E model 01 natural sciences time-to-breakdown Reduction (complexity) chemistry.chemical_compound tunneling 0103 physical sciences Electrical and Electronic Engineering 010302 applied physics power law business.industry 021001 nanoscience & nanotechnology Power (physics) FIS/01 - FISICA SPERIMENTALE chemistry Key (cryptography) Optoelectronics Degradation (geology) Antifuse Node (circuits) 0210 nano-technology business Voltage |
| Zdroj: | e & i Elektrotechnik und Informationstechnik |
| ISSN: | 0932-383X |
| DOI: | 10.1007/s00502-020-00838-1 |
| Popis: | OTP (One Time Programmable) memory in power technology enables electrical performance optimization together with area occupation reduction. In this paper, the aspects relative to the oxide breakdown (which is the key mechanism for memory programmability) are studied and applied to the development of an antifuse OTP cell in a 350 nm-CMOS power technology. The physical analysis of the degradation phases of an oxide layer is presented together with the physical models, exploited to foresee the device time-to-breakdown depending on applied voltage, oxide thickness etc. The achieved results are used in the development and reliable implementation of OTP cells in the target 350 nm-CMOS node. |
| Databáze: | OpenAIRE |
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