Insight into carrier lifetime impact on band-modulation devices
| Autor: | Sorin Cristoloveanu, Sebastien Martinie, Maryline Bawedin, Hyung Jin Park, Hassan El Dirani, Yuan Taur, Jean-Charles Barbe, Kyung Hwa Lee, Joris Lacord, Yue Xu, Mukta Singh Parihar |
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| Přispěvatelé: | Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Nanjing University of Posts and Telecommunications [Nanjing] (NJUPT), University of California [San Diego] (UC San Diego), University of California, European Project: 687931,H2020,H2020-ICT-2015,REMINDER(2016), University of California (UC) |
| Jazyk: | angličtina |
| Předmět: |
Materials science
Carrier lifetime Silicon on insulator Z2-FET 02 engineering and technology 01 natural sciences Generation-recombination Diffusion 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering Diffusion (business) [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 010302 applied physics SOI business.industry Hysteresis 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials Modulation Band modulation Optoelectronics 0210 nano-technology business |
| Zdroj: | Solid-State Electronics Solid-State Electronics, Elsevier, 2018, 143, pp.41-48. ⟨10.1016/j.sse.2017.12.007⟩ Solid-State Electronics, 2018, 143, pp.41-48. ⟨10.1016/j.sse.2017.12.007⟩ |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2017.12.007 |
| Popis: | International audience; A systematic study to model and characterize the band-modulation Z2-FET device is developed bringing light to the relevance of the carrier lifetime influence. This work provides guidelines to optimize the Z2-FETs for sharp switching, ESD protection, and 1T-DRAM applications. Lower carrier lifetime in the Z2-FET helps in attaining the sharp switch. We provide new insights into the correlation between generation/recombination, diffusion, electrostatic barriers and carrier lifetime. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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