Effective light polarization insensitive and omnidirectional properties of Si nanowire arrays developed on different crystallographic planes
| Autor: | Harsh A. Chaliyawala, Indrajit Mukhopadhyay, Sakshum Khanna, Zeel Purohit, Abhijit Ray, Ranjan K. Pati |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Scattering Mechanical Engineering Nanowire Physics::Optics Bioengineering 02 engineering and technology General Chemistry 010402 general chemistry 021001 nanoscience & nanotechnology Polarization (waves) 01 natural sciences 0104 chemical sciences Crystallography Wavelength Mechanics of Materials Optical medium Electric field General Materials Science Specular reflection Electrical and Electronic Engineering 0210 nano-technology Refractive index |
| Zdroj: | Nanotechnology. 30(12) |
| ISSN: | 1361-6528 |
| Popis: | In this paper, fabrication of vertical Si nanowire arrays (SiNWAs) by a facile metal assisted chemical etching approach on different crystallographic planes of Si has been reported. A very low specular reflectance (R spec ) of 0.04% and 0.03% has been achieved in the whole visible range for SiNWAs grown on Si(100) and Si(111) oriented substrates, respectively. High broadband enhancement has been detected for vertical SiNWAs due to multiple scattering paths inside the nanowire arrays. On the other hand, inclined nanowires showed a fascinating behavior at the longer wavelength regime, where light gets the longer path to reflect back-forth and ease to reflect back outward at normal incidence. Moreover, for [100] SiNWAs, transverse electric field component demonstrates the strong polarization insensitive properties at the expense of transverse magnetic field component with a minimum reflectance of |
| Databáze: | OpenAIRE |
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