Near-Infrared p-i-n Ge-on-Si Photodiodes for Silicon Integrated Receivers

Autor:	Lorenzo Colace, L. Nash, Gaetano Assanto, D. Fulgoni
Přispěvatelé:	Colace, Lorenzo, Assanto, Gaetano, Fulgoni, D, Nash, L., Colace, L
Rok vydání:	2008
Předmět:	Materials science Silicon business.industry Photodetector chemistry.chemical_element Germanium Chemical vapor deposition Capacitance Atomic and Molecular Physics and Optics Photodiode law.invention Optics chemistry law Optoelectronics business Current density Dark current
Popis:	We investigate and characterize p-i-n near-infrared photodiodes fabricated in Ge-on-Si by reduced-pressure chemical vapor deposition, a technology compatible with silicon processing. The detectors exhibit remarkably low dark current densities of 1mA/cm(2) at unity reverse bias and high responsivities of 200 mA/W at 1.55 mu m. We evaluated their small-signal resistance, capacitance, and bandwidth as well as eye-diagrams at 2.5 and 10 Gbit/s.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fec103a69c170eebb60d7921846c3f1a https://hdl.handle.net/11590/120430 Zobrazit plný text záznamu