Electrochemical Impedance Investigation of Anodic Alumina Barrier Layer
Autor: | A. Kadri, Eric Chainet, N. Benbrahim, Frédéric Charlot, B. Benfedda, L. Hamadou |
---|---|
Přispěvatelé: | Laboratoire de physique et de chimie des matériaux [Tizi-Ouzou] (LPCM), Université Mouloud Mammeri [Tizi Ouzou] (UMMTO), Laboratoire d'Electrochimie et de Physico-chimie des Matériaux et des Interfaces (LEPMI ), Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Joseph Fourier - Grenoble 1 (UJF)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Consortium des Moyens Technologiques Communs (CMTC), Institut National Polytechnique de Grenoble (INPG) |
Rok vydání: | 2012 |
Předmět: |
Materials science
Renewable Energy Sustainability and the Environment Nanoporous Anodizing Scanning electron microscope 020209 energy Oxide Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Dielectric spectroscopy Barrier layer chemistry.chemical_compound Chemical engineering chemistry [CHIM.ANAL]Chemical Sciences/Analytical chemistry 0202 electrical engineering electronic engineering information engineering Materials Chemistry Electrochemistry [CHIM]Chemical Sciences 0210 nano-technology Layer (electronics) |
Zdroj: | Journal of The Electrochemical Society Journal of The Electrochemical Society, Electrochemical Society, 2012, 159 (8), pp.C372-C381. ⟨10.1149/2.068208jes⟩ |
ISSN: | 1945-7111 0013-4651 |
DOI: | 10.1149/2.068208jes |
Popis: | International audience; In the present work, well ordered nanoporous anodic aluminum oxides (AAO) have been prepared on aluminum by a two step anodization process in 0.5 M oxalic acid at various potentials. We report the properties and semiconducting characteristics of the porous alumina barrier layers by electrochemical impedance spectroscopy analysis (EIS). EIS is considered to be a highly sensitive and non-destructive technique that allows determining barrier oxide layer characteristics. Aluminum oxide barrier is considered as a semiconductor which acts as a p-n heterojunction at anodizing voltages up to 20 V. The alumina barrier layer structure consists of a hole transport inner layer and an electron transport outer layer. Doping densities, flatband potential as well as space charge layer thickness are discussed in correlation with anodizing potential. Barrier layer thicknesses measurements obtained by EIS were compared with those obtained after EIS measurements by direct scanning electron microscopy observations. |
Databáze: | OpenAIRE |
Externí odkaz: |