Modeling of Fermi-level pinning alleviation with MIS contacts: n and pMOSFETs cointegration considerations-Part I
| Autor: | Julien Borrel, Louis Hutin, Olivier Rozeau, Marie-Anne Jaud, Sebastien Martinie, Magali Gregoire, Emmanuel Dubois, Maud Vinet |
|---|---|
| Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Microélectronique Silicium - IEMN (MICROE SI - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), French Public Authorities through the NANO Program, French National Research AgencyFrench National Research Agency (ANR) [FDSOI11], ST-LETI Joint Program, Laboratoire commun STMicroelectronics-IEMN T4, STMicroelectronics [Crolles] (ST-CROLLES), Microélectronique Silicium - IEMN (MICROELEC SI - IEMN) |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
T-WKB approximation CMOS T WKB approximation 02 engineering and technology 1-D modeling 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials [SPI]Engineering Sciences [physics] nFET and pFET cointegration 0103 physical sciences metal/insulator/semiconductor (MIS) contacts [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Electrical and Electronic Engineering 0210 nano-technology metal/insulator/ semiconductor (MIS) contacts |
| Zdroj: | IEEE Transactions on Electron Devices IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2016, 63 (9), pp.3413-3418. ⟨10.1109/TED.2016.2590836⟩ IEEE Transactions on Electron Devices, 2016, 63 (9), pp.3413-3418. ⟨10.1109/TED.2016.2590836⟩ |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/TED.2016.2590836⟩ |
| Popis: | International audience; Aiming at overcoming the Fermi-level pinning (FLP) occurring at the metal/semiconductor interfaces, metal/insulator/semiconductor (MIS) contacts to n-Si and p-Si are usually treated in separate optimization studies, yet with no particular insight on their technological compatibility. In this paper, using 1-D analytical modeling of MIS contacts, it is shown that in order to fully benefit from FLP mitigation on both n- and p-type Si, a single-insertion/single-metallization scheme cannot be considered. In addition, it is demonstrated that associating given numerical values of contact resistivity with MIS contacts results in a thorny problem, since their I-V characteristics are nonsymmetric nonlinear. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|