Visible upconversion luminescence of doped bulk silicon for a multimodal wafer metrology
| Autor: | Maxim Ryabko, Vladimir O. Bessonov, Anton Medvedev, Sangwoo Bae, Alexander S. Shorokhov, Hosun Yoo, Taehyun Kim, Joo Won-Don, Kyunghun Han, Stanislav Polonsky, Ingi Kim, Boris I. Afinogenov, Minhwan Seo, Vladimir N. Mantsevich, I. M. Antropov, Andrey A. Fedyanin, Nikita R. Filatov, Jeang Eun-Hee, Anton N. Sofronov, Natalia Sergeevna Maslova |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
Silicon Infrared business.industry Doping chemistry.chemical_element 02 engineering and technology Spectral bands 021001 nanoscience & nanotechnology 01 natural sciences Atomic and Molecular Physics and Optics law.invention 010309 optics Optics chemistry law Excited state 0103 physical sciences Wafer Scanning tunneling microscope 0210 nano-technology business Luminescence |
| Zdroj: | Optics letters. 46(13) |
| ISSN: | 1539-4794 |
| Popis: | We report the experimental observation of the UV-visible upconverted luminescence of bulk silicon under pulsed infrared excitation. We demonstrate that non-stationary distribution of excited carriers leads to the emission at spectral bands never to our knowledge observed before. We show that the doping type and concentration alter the shape of luminescence spectra. Silicon nanoparticles have a size between quantum-confined and Mie-type limits (10–100 nm) yet show increased luminescence intensity when placed atop a silicon wafer. The findings demonstrate that upconversion luminescence can become a powerful tool for nearest future silicon wafer inspection systems as a multimodal technique of measuring the several parameters of the wafer simultaneously. |
| Databáze: | OpenAIRE |
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