Large photocurrent density enhancement assisted by non-absorbing spherical dielectric nanoparticles in a GaAs layer
| Autor: | Bhaskar Singh, Daniel M. Schaadt, Mohammed M. Shabat |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Photon lcsh:Medicine Nanoparticle 02 engineering and technology Dielectric engineering.material 01 natural sciences Article Coating 0103 physical sciences lcsh:Science 010302 applied physics Photocurrent Nanophotonics and plasmonics Multidisciplinary business.industry lcsh:R 021001 nanoscience & nanotechnology Photovoltaics Angle of incidence (optics) engineering Nanoparticles Optoelectronics Antireflection coating lcsh:Q 0210 nano-technology business Layer (electronics) |
| Zdroj: | Scientific Reports, Vol 10, Iss 1, Pp 1-6 (2020) Scientific Reports |
| ISSN: | 2045-2322 |
| Popis: | Herein, we report a theoretical investigation of large photocurrent density enhancement in a GaAs absorber layer due to non-absorbing spherical dielectric (SiO2) nanoparticles-based antireflection coating. The nanoparticles are embedded in a dielectric matrix (SiN) which improves the antireflection property of SiN ($$\lambda /4$$ λ / 4 coating) and let to pass more photons into the GaAs layer. The improvement is noticed omnidirectional and the highest is more than 100% at 85° angle of incidence with the nanoparticles’ surface filling density of 70%. Sunrise to sunset calculation of normalized photocurrent density over the course of a year have also shown improvements in the nanoparticles’ case. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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