Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures

Autor: Yi Han, Fengben Xi, Frederic Allibert, Ionut Radu, Slawomir Prucnal, Jin-Hee Bae, Susanne Hoffmann-Eifert, Joachim Knoch, Detlev Grützmacher, Qing-Tai Zhao
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: Solid-State Electronics 192(2022), 108263
Solid state electronics 192, 108263-(2022). doi:10.1016/j.sse.2022.108263
DOI: 10.1016/j.sse.2022.108263
Popis: In this paper we present an experimental study of SOI UTBB n-MOSFETs at cryogenic temperatures. The device employs fully silicided source/drain with dopant segregation formed by “Implantation Into Silicide” (IIS) process. The impact of the back-gate (Vback) on the device performance is systematically investigated. The results demonstrate that Vback is essential to tune the threshold voltage Vth. And optimization of Vback values can improve the subthreshold swing (SS), Drain-Induced Barrier Lowering (DIBL), transconductance Gm and mobility at cryogenic temperatures, providing a potential to fulfill the ultra-low power requirement for quantum computing application.
Databáze: OpenAIRE