Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures
Autor: | Yi Han, Fengben Xi, Frederic Allibert, Ionut Radu, Slawomir Prucnal, Jin-Hee Bae, Susanne Hoffmann-Eifert, Joachim Knoch, Detlev Grützmacher, Qing-Tai Zhao |
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Jazyk: | angličtina |
Rok vydání: | 2022 |
Předmět: | |
Zdroj: | Solid-State Electronics 192(2022), 108263 Solid state electronics 192, 108263-(2022). doi:10.1016/j.sse.2022.108263 |
DOI: | 10.1016/j.sse.2022.108263 |
Popis: | In this paper we present an experimental study of SOI UTBB n-MOSFETs at cryogenic temperatures. The device employs fully silicided source/drain with dopant segregation formed by “Implantation Into Silicide” (IIS) process. The impact of the back-gate (Vback) on the device performance is systematically investigated. The results demonstrate that Vback is essential to tune the threshold voltage Vth. And optimization of Vback values can improve the subthreshold swing (SS), Drain-Induced Barrier Lowering (DIBL), transconductance Gm and mobility at cryogenic temperatures, providing a potential to fulfill the ultra-low power requirement for quantum computing application. |
Databáze: | OpenAIRE |
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