Variations in the Memory Capability of Nonvolatile Memory Devices Fabricated Using Hybrid Composites of InP Nanoparticles and a Polystyrene Layer Due to the Scale-Down
| Autor: | J. H. Jung, Dong Yeol Yun, Taikon Kim, Euidock Ryu, S. H. Lee, Joo Hyung You, Sang-Wook Kim |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Chemical substance Biomedical Engineering Nanoparticle Bioengineering General Chemistry Condensed Matter Physics Non-volatile memory Hysteresis chemistry.chemical_compound chemistry Transmission electron microscopy General Materials Science Polystyrene Composite material Science technology and society Layer (electronics) |
| Zdroj: | Journal of Nanoscience and Nanotechnology. 11:449-452 |
| ISSN: | 1533-4880 |
| DOI: | 10.1166/jnn.2011.3172 |
| Popis: | InP nanoparticles were formed using a solution method, and the InP nanoparticles that were embedded in a polystyrene (PS) layer were formed using the spin-coating method. The transmission electron microscopy images showed that the InP nanoparticles were randomly distributed in the PS layer. The measured capacitance-voltage (C-V) of the Al/InP nanoparticles embedded in the PS layer/PS/p-Si(100) device at 300 K showed a clockwise hysteresis of the C-V curve. Based on the C-V results, the origin of variations in the memory storage of nonvolatile memory devices that were fabricated using InP nanoparticles embedded in a PS layer due to the scale-down was described. |
| Databáze: | OpenAIRE |
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