Simple Fabrication of Silicon Nanowires by Zinc-Thermal Reduction of Silicon Tetrachloride at 773 K
| Autor: | Yousuke Mizutani, Toshiyuki Nohira, Yusaku Nishimura, Rika Hagiwara |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Fabrication
Materials science business.industry General Chemical Engineering chemistry.chemical_element Zinc Reduction (complexity) chemistry.chemical_compound chemistry Simple (abstract algebra) Thermal Electrochemistry Silicon tetrachloride Optoelectronics General Materials Science LOCOS Electrical and Electronic Engineering Physical and Theoretical Chemistry business Silicon nanowires |
| Zdroj: | Electrochemical and Solid-State Letters. 14:K63 |
| ISSN: | 1099-0062 |
| DOI: | 10.1149/2.011111esl |
| Popis: | This paper reports a simple Si nanowire (SiNW) production process based on zinc-thermal reduction of SiCl₄ in a sealed Pyrex® tube at 773 K. SiNWs with a diameter of about 300 nm were produced without any catalysts. The SiNWs consisted mainly of an amorphous phase, but also including a minor microcrystalline component. The introduction of Au nanoparticles to the reaction tube wall facilitated crystallization and resulted in the growth of thinner SiNWs. The typical diameter of these SiNWs was 10–20 nm. The simple apparatus and low operating temperature of this new process are advantageous in producing SiNWs on both industrial and laboratory scales. |
| Databáze: | OpenAIRE |
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