Diode design for studying material defect distributions with avalanche-mode light emission
| Autor: | Max Krakers, K.M. Batenburg, Lis K. Nanver, Tihomir Knezevic, Xingyu Liu |
|---|---|
| Přispěvatelé: | MESA+ Institute, Integrated Devices and Systems, Power Electronics |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Avalanche mode Materials science Distribution (number theory) business.industry Physics::Instrumentation and Detectors 22/3 OA procedure 02 engineering and technology 01 natural sciences Rapid assessment 020210 optoelectronics & photonics Material defect Test structure 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Light emission avalanche diode SPAD PureB light emission defects business Diode |
| Zdroj: | 2020 IEEE 33rd International Conference on Microelectronic Test Structures, ICMTS 2020-Proceedings |
| Popis: | Avalanche-mode visual light emission in Si diodes is shown to be useful for rapid assessment of the origin of non-ideal currents. In the test structure design, it was important to consider the breakdown-voltage distribution, diode size and contact positioning to obtain light-spot appearances at positions related to bulk defect distributions. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|