Two-Step Passivation For Enhanced Ingan/Gan Light Emitting Diodes With Step Graded Electron Injectors
| Autor: | V. Avrutin, M. Elçi, Atilla Aydinli, Hadis Morkoç, Kai Ding, Ümit Özgür, Ismail Altuntas, M. Genç, N. Sheremet, V. N. Sheremet, Negar Gheshlaghi |
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| Přispěvatelé: | [Sheremet, V. -- Gheshlaghi, N. -- Elci, M. -- Sheremet, N. -- Aydinli, A.] Bilkent Univ, Dept Phys, Adv Res Labs, TR-06800 Ankara, Turkey -- [Genc, M.] Optoelect R&D Ctr, TR-16065 Ermaksan, Bursa, Turkey -- [Sheremet, N.] Natl Acad Sci Ukraine, Inst Phys, UA-03680 Kiev, Ukraine -- [Aydinli, A.] Uludag Univ, Dept Elect & Elect Engn, TR-16059 Bursa, Turkey -- [Altuntas, I.] Cumhuriyet Univ, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey -- [Avrutin, V. -- Ozgur, U. -- Morkoc, H.] Virginia Commonwealth Univ, Dept Elect & Comp Engn, Sch Engn, Med Coll Virginia Campus, Richmond, VA 23284 USA, Sheremet, Nina -- 0000-0001-6955-1095, Sheremet, Volodymyr -- 0000-0003-0840-5312, Ding, Kai -- 0000-0003-4791-4742, Genc, Muhammet -- 0000-0003-1887-3582 |
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Passivation Two step Light emitting diode Si3N4 02 engineering and technology Electron 01 natural sciences law.invention law 0103 physical sciences General Materials Science InGaN/GaN multiple quantum well Electrical and Electronic Engineering Radiant intensity Leakage (electronics) 010302 applied physics business.industry Step graded electron injector Injector 021001 nanoscience & nanotechnology Condensed Matter Physics Optoelectronics 0210 nano-technology business Order of magnitude Light-emitting diode |
| Zdroj: | Superlattices and Microstructures |
| Popis: | WOS: 000425566100069 Enhancement of InGaN/GaN based light emitting diode performance with step graded electron injectors through a two-step passivation is reported. Perimeter passivation of LED dies with SiO2 immediately following ICP mesa etch in addition to conventional Si3N4 dielectric surface passivation leads to decrease in the reverse bias leakage current by a factor of two as well as a decrease in the shunt current under forward bias by an order of magnitude. Mitigation of the leakage currents owing to the two-step passivation leads to significant increase in the radiant intensity of LEDs by more than a factor of two compared to the conventional single step surface passivation. Further, micro-dome patterned surface of Si3N4 passivation layer allow enhanced light extraction from LEDs. (C) 2017 Elsevier Ltd. All rights reserved. Scientific and Technological Research Council of Turkey (TUBITAK) [113G042]; TUBITAK Financial support for this project was provided by the Scientific and Technological Research Council of Turkey (TUBITAK) [Grant No: 113G042]. Ismail Altuntas, acknowledges the Ph.D. Grant support from TUBITAK. We thank to UNAM-National Nanotechnology Research Center at Bilkent University for the use of fabrication and characterization equipment. |
| Databáze: | OpenAIRE |
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