GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source
| Autor: | Benjamin Damilano, C. Chaix, Marc Portail, Yvon Cordier, Phannara Aing, Philippe Vennéguès, Filip Tuomisto, Denis Lefebvre, M. Nemoz, F. Linez, Eric Frayssinet |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Materials science
02 engineering and technology Nitride 01 natural sciences Nitrides Inorganic Chemistry Impurity 0103 physical sciences Materials Chemistry HETEROSTRUCTURES QUALITY Point defects Crystal morphology Quantum well 010302 applied physics ta114 business.industry Heterojunction Plasma OPTICAL-PROPERTIES 021001 nanoscience & nanotechnology Condensed Matter Physics Crystallographic defect Quantum wells Optoelectronics Light emission 0210 nano-technology business Molecular beam epitaxy Impurities |
| Zdroj: | Journal of crystal growth. 433:165-171 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2015.10.017 |
| Popis: | The behavior of a high density radical source for the plasma assisted molecular beam epitaxy of GaN and AlGaN compounds is studied and compared with the one of a conventional plasma source. Plasma light emission correlates with the GaN growth rate. Both attest to the better efficiency of the new source for producing active nitrogen species with resulting growth rates well beyond 1 µm/h. The present study shows that GaN films with equivalent structural and optical quality can be grown even with a growth rate enhancement by a factor of 5. The purity of the grown films is investigated as well as point defects. Positron annihilation shows that plasma conditions can be tuned in order to limit the increase of the gallium-vacancy related complexes density by about 2x10 16 cm −3 while reaching growth rates as high as 2.1 µm/h. |
| Databáze: | OpenAIRE |
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