Negative differential resistance in carbon nanotube field-effect transistors with patterned gate oxide
| Autor: | Andreas Johansson, Päivi Törmä, Marcus Rinkiö, Ville Kotimäki |
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| Rok vydání: | 2010 |
| Předmět: |
Nanostructure
Materials science Transistors Electronic Macromolecular Substances Surface Properties Molecular Conformation General Physics and Astronomy Nanotechnology Carbon nanotube law.invention Computer Science::Emerging Technologies Gate oxide law Materials Testing Electric Impedance General Materials Science Particle Size Transistor General Engineering Oxides Equipment Design Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Nanostructures Equipment Failure Analysis Hysteresis Quantum dot Field-effect transistor Crystallization Voltage |
| Zdroj: | ACS nano. 4(6) |
| ISSN: | 1936-086X |
| Popis: | We demonstrate controllable and gate-tunable negative differential resistance in carbon nanotube field-effect transistors, at room temperature and at 4.2 K. This is achieved by effectively creating quantum dots along the carbon nanotube channel by patterning the underlying, high-kappa gate oxide. The negative differential resistance feature can be modulated by both the gate and the drain-source voltage, which leads to more than 20% change of the current peak-to-valley ratio. Our approach is fully scalable and opens up a possibility for a new class of nanoscale electronic devices using negative differential resistance in their operation. |
| Databáze: | OpenAIRE |
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