Improvement of the conductivity and surface passivation properties of boron-doped poly-silicon on oxide
| Autor: | Audrey Morisset, Marie-Estelle Gueunier-Farret, Raphaël Cabal, Sébastien Dubois, Jean-Paul Kleider, Bernadette Grange, Clément Marchat, José Alvarez |
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| Přispěvatelé: | Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU), Institut National de L'Energie Solaire (INES), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF), Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), ANR-17-CE05-0034,OXYGENE,OXYdes fonctionnalisés pour jonctions ultra-minces et contacts tunnel : vers une nouvelle GENEration de cellules photovoltaïques en silicium cristallin(2017) |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
inorganic chemicals Materials science Passivation Silicon Annealing (metallurgy) Oxide technology industry and agriculture chemistry.chemical_element 02 engineering and technology Conductivity 021001 nanoscience & nanotechnology 01 natural sciences 7. Clean energy [PHYS.PHYS.PHYS-GEN-PH]Physics [physics]/Physics [physics]/General Physics [physics.gen-ph] [SPI.MAT]Engineering Sciences [physics]/Materials chemistry.chemical_compound Chemical engineering chemistry Plasma-enhanced chemical vapor deposition 0103 physical sciences Crystalline silicon 0210 nano-technology Silicon oxide |
| Zdroj: | Silicon PV 2018 Silicon PV 2018, Mar 2018, Lausanne, Switzerland. pp.040017, ⟨10.1063/1.5049280⟩ |
| Popis: | International audience; Passivating contacts of crystalline silicon (c-Si) solar cells with a poly-silicon layer (poly-Si) on a thin siliconoxide (SiOx) film offer an interesting approach to decrease the recombination current at the metal/c-Si interface and toincrease the cell efficiency. This study focuses on the development of boron-doped poly-Si layers deposited by PlasmaEnhanced Chemical Vapour Deposition (PECVD) on top of a thin silicon oxide film. First, the deposition and annealingconditions were optimised in order to: (1) reduce the blistering of the poly-Si on the thin SiOx film and (2) improve thepoly-Si conductivity. The passivation properties of the resulting structures have been shown to depend on the blister densityand have been improved through a hydrogenation step leading to a maximum implied open-circuit voltage value of 721 mV. |
| Databáze: | OpenAIRE |
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