AlGaN/GaN metal-insulator-semiconductor capacitors with a buried Mg doped layer characterized by deep level transient spectroscopy and photoluminescence
| Autor: | Philippe Ferrandis, Erwan Morvan, Gérard Guillot, Mariam El-Khatib, Georges Bremond |
|---|---|
| Přispěvatelé: | INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université de Toulon (UTLN), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Photoluminescence Materials science Deep-level transient spectroscopy business.industry Doping Transistor Heterojunction Gallium nitride High voltage 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention chemistry.chemical_compound Semiconductor chemistry law 0103 physical sciences Optoelectronics [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 0210 nano-technology business |
| Zdroj: | SPIE Proceedings SPIE OPTO 2018 SPIE OPTO 2018, Jan 2018, San Fransisco, United States. pp.39, ⟨10.1117/12.2289067⟩ |
| DOI: | 10.1117/12.2289067⟩ |
| Popis: | International audience; GaN material holds an advantageous position in the fabrication of power devices. This advantage is manifested by the possibility to perform GaN based devices working in high voltage, high current, high frequency and high temperature conditions. However, despite these theoretical forecasts, trapping mechanisms limit the performances of the GaN based devices revealed by the so-called "drain current collapse". Our study is based on a methodology to understand trapping mechanisms in GaN metal-insulator-semiconductor high-electron mobility transistors. This work was achieved by means of electrical and optical characterization techniques such as Fourier transform deep level transient spectroscopy and photoluminescence. The activation energy and the apparent capture cross section of eight traps were extracted in normally-off (Ids=0A when Vgs=0V) AlGaN/GaN heterostructure technology used for power conversion. Six of these traps, E1=0.16eV, E2=0.31eV, E3=0.46eV, E4=0.5eV, E5=0.64eV and E6=0.79eV are electron traps located in the channel. An identification has been proposed for each trap. Two hole-like traps, H1=0.17eV and H2=0.74eV were assigned to the Mg and C doping of the GaN buffer layers, respectively. These traps might play a role in the current collapse which appears after the application of a large reverse voltage on the gate of the device. Furthermore, the results obtained using electrical and optical techniques allowed concluding that oxygen atoms and dislocations are incorporated in GaN layers during the growth. |
| Databáze: | OpenAIRE |
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