Effects of the front surface field in n-type interdigitated back contact silicon heterojunctions solar cells
| Autor: | Djicknoum Diouf, T. Desrues, P.-J. Ribeyron, Jean-Paul Kleider |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Amorphous silicon
Materials science Passivation Silicon chemistry.chemical_element 02 engineering and technology 01 natural sciences 7. Clean energy Polymer solar cell Modelling Monocrystalline silicon chemistry.chemical_compound Rear contact Energy(all) 0103 physical sciences Electronic engineering Crystalline silicon 010302 applied physics business.industry Nanocrystalline silicon Strained silicon Silicon heterojunctions 021001 nanoscience & nanotechnology chemistry Hydrogenated amorphous silicon Optoelectronics 0210 nano-technology business |
| Zdroj: | Energy Procedia. 2(1):59-64 |
| ISSN: | 1876-6102 |
| DOI: | 10.1016/j.egypro.2010.07.011 |
| Popis: | Previous simulations of interdigitated back contact silicon heterojunction (IBC-SiHJ) solar cells have indicated that front surface passivation is a critical factor in the performance of such cells. This is why we here focus on the effect of a front surface field (FSF) layer by 2D numerical modelling. A FSF layer made of a highly doped thin crystalline silicon top layer makes the cell performance insensitive to the surface recombination velocity up to quite high values (5000 cm/s). It also reduces the lateral resistance losses due to the increased lateral current through the doped layer particularly in IBC-SiHJ solar cells with large pitches. A FSF layer can also be produced by doped hydrogenated amorphous silicon due to the induced accumulation layer at the crystalline silicon surface. The positive effect of such layer strongly depends on the a-Si:H/c-Si interface quality. |
| Databáze: | OpenAIRE |
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