pH-controlled selective etching of Al2O3 over ZnO

Autor:	Kaige G. Sun, David B. Saint John, Yuanyuan V. Li, Thomas N. Jackson
Rok vydání:	2014
Předmět:	Aqueous solution Materials science Inorganic chemistry chemistry.chemical_element Zinc Highly selective Atomic layer deposition Chemical engineering chemistry Etching (microfabrication) Thin-film transistor Spectroscopic ellipsometry General Materials Science Selectivity
Zdroj:	ACS applied materialsinterfaces. 6(10)
ISSN:	1944-8252
Popis:	We describe pH-controlled selective etching of atomic layer deposition (ALD) Al2O3 over ZnO. Film thickness as a function of etch exposure was measured by spectroscopic ellipsometry. We find that alkaline aqueous solutions with pH between about 9 and 12 will etch Al2O3 at useful rate with minimal attack of ZnO. Highly selective etching of Al2O3 over ZnO (selectivity >400:1) and an Al2O3 etch rate of ∼50 nm/min can be obtained using a pH 12 etch solution at 60 °C.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd257300f750902297b7f84d418e68ef https://pubmed.ncbi.nlm.nih.gov/24818868 Zobrazit plný text záznamu