Micro-Nano Fabrication of Self-Aligned Silicon Electron Field Emitter Arrays Using Pulsed KrF Laser Irradiation
| Autor: | Mohammed Usman, Monji Zaidi, M. R. Rahman, Syed Jaffar Ali, Mohammad Shiblee, Mohammed Zubair M. Shamim, Saydulla Persheyev |
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| Přispěvatelé: | University of St Andrews. Organic Semiconductor Centre, University of St Andrews. School of Physics and Astronomy |
| Rok vydání: | 2020 |
| Předmět: |
Solid-state chemistry
Fabrication Materials science Silicon TK NDAS chemistry.chemical_element 02 engineering and technology 01 natural sciences TK Electrical engineering. Electronics Nuclear engineering law.invention law 0103 physical sciences Materials Chemistry Excimer laser crystallization Electron field emission display Irradiation Electrical and Electronic Engineering QC Common emitter 010302 applied physics business.industry 021001 nanoscience & nanotechnology Condensed Matter Physics Laser Electronic Optical and Magnetic Materials Amorphous solid Field electron emission QC Physics chemistry Hydrogenated amorphous silicon Control and Systems Engineering Ceramics and Composites Optoelectronics 0210 nano-technology business |
| Zdroj: | Integrated Ferroelectrics. 204:47-57 |
| ISSN: | 1607-8489 1058-4587 |
| DOI: | 10.1080/10584587.2019.1674988 |
| Popis: | The authors gratefully acknowledge the support by the College of Engineering Research Center under the Deanship of Scientific Research of King Khalid University, Saudi Arabia. (Grant No. 98) Self-aligned silicon micro-nano structured electron field emitter arrays were fabricated using pulsed krypton fluoride (KrF) excimer laser crystallization (ELC) of hydrogenated amorphous thin silicon films (a-Si:H) on metal coated backplane samples. We investigate the effect of laser processing parameters on the growth of micro-nano conical structures on the surface of the thin silicon films. Randomly oriented conical structures as high as 1 µm were fabricated using laser pulse frequency of 100 Hz and sample stage scanning speed of 0.25 mm/sec. Best field emission (FE) results were measured from samples with the highest surface features with FE currents in the order of 10−6 A and low turn-on emission threshold of ∼14 V/µm. Light emission from the prototype demonstrators was tested using bespoke driver electronics and planar anodes coated with indium tin-oxide (ITO) and medium voltage FE phosphors, to exemplify their usage for future flat panel display technologies. Postprint |
| Databáze: | OpenAIRE |
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