Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades
Autor: | Maurizio Boscardin, Marco Bomben, G. Marchiori, Alvise Bagolini, G. Calderini, L. Bosisio, Jacques Chauveau, Gabriele Giacomini, Nicola Zorzi, A. La Rosa |
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Rok vydání: | 2013 |
Předmět: |
Physics - Instrumentation and Detectors
Cost effectiveness Computer science Physics::Instrumentation and Detectors FOS: Physical sciences 7. Clean energy High Energy Physics - Experiment High Energy Physics - Experiment (hep-ex) Planar Detectors and Experimental Techniques Precision Pixel Detectors [9.3] Instrumentation Radiation hardening physics.ins-det Mathematical Physics Advanced infrastructures for detector R&D [9] Large Hadron Collider Pixel business.industry hep-ex ATLAS experiment Detector Electrical engineering Instrumentation and Detectors (physics.ins-det) Upgrade business |
Zdroj: | JINST, (2014) pp. C05020 |
DOI: | 10.48550/arxiv.1311.1628 |
Popis: | In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, and presenting some sensors' simulation results, a complete overview of the electrical characterization of the produced devices will be given. Comment: 9 pages, 9 figures, to appear in the proceedings of the 15th International Workshops on Radiation Imaging Detectors |
Databáze: | OpenAIRE |
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