Cathodoluminescence Spectroscopic Stress Analysis for Silicon Oxide Film and Its Damage Evaluation
| Autor: | Takahiro Namazu, Shozo Inoue, Naoaki Yamashita, Yoshiharu Goshima, Nobutaka Goami, Nobuyuki Naka, Kentaro Nishikata, Shingo Kammachi, Shigeru Kakinuma |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Silicon Scanning electron microscope chemistry.chemical_element Cathodoluminescence lcsh:Technology Article electron beam irradiation symbols.namesake General Materials Science Composite material Thin film Silicon oxide lcsh:Microscopy lcsh:QC120-168.85 cathodoluminescence spectroscopy Si nanocrystal lcsh:QH201-278.5 lcsh:T SiO2 film nondestructive stress analysis Full width at half maximum chemistry Transmission electron microscopy lcsh:TA1-2040 Raman spectroscopy symbols lcsh:Descriptive and experimental mechanics lcsh:Electrical engineering. Electronics. Nuclear engineering lcsh:Engineering (General). Civil engineering (General) lcsh:TK1-9971 |
| Zdroj: | Materials, Vol 13, Iss 4490, p 4490 (2020) Materials Volume 13 Issue 20 |
| ISSN: | 1996-1944 |
| Popis: | We describe the stress analysis of silicon oxide (SiO2) thin film using cathodoluminescence (CL) spectroscopy and discuss its availability in this paper. To directly measure the CL spectra of the film under uniaxial tensile stresses, specially developed uniaxial tensile test equipment is used in a scanning electron microscope (SEM) equipped with a CL system. As tensile stress increases, the peak position and intensity proportionally increase. This indicates that CL spectroscopy is available as a stress measurement tool for SiO2 film. However, the electron beam (EB) irradiation time influences the intensity and full width at half maximum (FWHM), which implies that some damage originating from EB irradiation accumulates in the film. The analyses using Raman spectroscopy and transmission electron microscopy (TEM) demonstrate that EB irradiation for stress measurement with CL induces the formation of silicon (Si) nanocrystals into SiO2 film, indicating that CL stress analysis of the film is not nondestructive, but destructive inspection. |
| Databáze: | OpenAIRE |
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