Poly-Si/SiOx/c-Si passivating contact with 738 mV implied open circuit voltage fabricated by hot-wire chemical vapor deposition
| Autor: | Manuel Pomaska, Uwe Rau, Shenghao Li, Jan Hoß, Kaining Ding, Frank Pennartz, Maurice Nuys, Johannes Wolff, Andreas Schmalen, Friedhelm Finger, Jan Lossen, Ruijiang Hong |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Passivation Silicon Open-circuit voltage business.industry chemistry.chemical_element 02 engineering and technology Substrate (electronics) Chemical vapor deposition 021001 nanoscience & nanotechnology 01 natural sciences chemistry 0103 physical sciences Deposition (phase transition) Optoelectronics ddc:530 Crystalline silicon Thin film 0210 nano-technology business |
| Zdroj: | Applied physics letters 114(15), 153901 (2019). doi:10.1063/1.5089650 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.5089650 |
| Popis: | Hot-wire chemical vapor deposition (HWCVD) was utilized to develop a fast and high quality a-Si:H thin film fabrication method for poly-Si/SiOx carrier selective passivating contacts targeting at n-type passivated emitter rear totally diffused crystalline silicon solar cells. The microstructure and hydrogen content of the a-Si:H thin films were analyzed by Fourier-transform infrared spectroscopy in order to understand the influence of film properties on passivation and conductivity. Dense layers were found to be beneficial for good passivation. On the other hand, blistering appeared as a-Si:H layers became more and more dense. However, by adjusting the SiH4 flow rate and the substrate heater temperature, blistering of a-Si:H could be avoided. A suitable process window was found and firing-stable implied open circuit voltage (iVoc) of up to 738 mV was achieved. In addition to high iVoc, a low contact resistivity of 0.034 Ω cm2 was also achieved. The deposition rate of the a-Si:H layers was 7 A/s by using HWCVD, which is one order of magnitude higher than the deposition rate reported using other deposition methods.Hot-wire chemical vapor deposition (HWCVD) was utilized to develop a fast and high quality a-Si:H thin film fabrication method for poly-Si/SiOx carrier selective passivating contacts targeting at n-type passivated emitter rear totally diffused crystalline silicon solar cells. The microstructure and hydrogen content of the a-Si:H thin films were analyzed by Fourier-transform infrared spectroscopy in order to understand the influence of film properties on passivation and conductivity. Dense layers were found to be beneficial for good passivation. On the other hand, blistering appeared as a-Si:H layers became more and more dense. However, by adjusting the SiH4 flow rate and the substrate heater temperature, blistering of a-Si:H could be avoided. A suitable process window was found and firing-stable implied open circuit voltage (iVoc) of up to 738 mV was achieved. In addition to high iVoc, a low c... |
| Databáze: | OpenAIRE |
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