A study to improve light confinement and rear-surface passivation in a thin-Cu(In, Ga)Se2 solar cell

Autor: Miro Zeman, Sunil Suresh, Dilara Gokcen Buldu, Thierry Kohl, Guy Brammertz, J. Poortmans, Olindo Isabella, M. Meuris, J. de Wild, Bart Vermang
Přispěvatelé: SURESH, Sunil, DE WILD, Jessica, KOHL, Thierry, BULDU KOHL, Dilara, BRAMMERTZ, Guy, MEURIS, Marc, POORTMANS, Jef, Isabella, Olindo, Zeman, Miro, VERMANG, Bart
Jazyk: angličtina
Rok vydání: 2019
Předmět:
Zdroj: Thin Solid Films
ISSN: 0040-6090
Popis: Reducing the absorber layer thickness below 1 μm for a regular copperindiumgalliumdi-selenide (CIGS)solar celllowers the minimum quality requirements for the absorber layer due to shorter electron diffusion length. Additionally, it reduces material costs and production time. Yet, having such a thin absorber reduces the cell efficiency significantly. This is due to incompletelight absorptionand high Molybdenum/CIGS rear-surface recombination [1]. The aim of this research is to implement some innovative rearsurface modificationson a 430 nm thick CIGS absorber layer to reduce both these affects: analuminium oxidepassivationlayer to reduce the back-surface recombination and point contact openings usingnano-particlesfor electrical contact. The impact of the implementation of all these rear-surface modifications on the opto-electrical properties of the CIGS solar cell will be discussed and analyzed in this paper.
Databáze: OpenAIRE