Resistance switch employing a simple metal nanogap junction
| Autor: | Yasuhisa Naitoh, Tetsuo Shimizu, Masayo Horikawa, Hidekazu Abe |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Materials science
business.industry Mechanical Engineering Negative resistance Bioengineering Biasing Nanotechnology General Chemistry Metal Hysteresis Mechanics of Materials visual_art visual_art.visual_art_medium Gap width Optoelectronics General Materials Science Nanometre Metal electrodes Electrical and Electronic Engineering business Voltage |
| Zdroj: | Nanotechnology. 17:5669-5674 |
| ISSN: | 1361-6528 0957-4484 |
| DOI: | 10.1088/0957-4484/17/22/022 |
| Popis: | In recent years, several researchers have reported the occurrence of reversible resistance switching effects in simple metal nanogap junctions. A large negative resistance is observed in the I-V characteristics of such a junction when high-bias voltages are applied. This phenomenon is characteristic behaviour on the nanometre scale; it only occurs for gap widths slightly under 13 nm. Furthermore, such a junction exhibits a non-volatile resistance hysteresis when the bias voltage is reduced very rapidly from a high level to around 0 V, and when the bias voltage is reduced slowly. This non-volatile resistance change occurs as a result of changes in the gap width between the metal electrodes, brought about by the applied bias voltage. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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