Rational design of Al2O3/2D perovskite heterostructure dielectric for high performance MoS2 phototransistors
Autor: | Quanyang Tao, Lei Liao, Yawei Lv, Yuan Liu, Xuming Zou, Jiayang Jiang, Yang Chai, Weiting Xu |
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Jazyk: | angličtina |
Rok vydání: | 2020 |
Předmět: |
0301 basic medicine
Materials science Science General Physics and Astronomy Photodetector Ionic bonding 02 engineering and technology Dielectric General Biochemistry Genetics and Molecular Biology 03 medical and health sciences lcsh:Science Perovskite (structure) Multidisciplinary business.industry Heterojunction Biasing General Chemistry 021001 nanoscience & nanotechnology Ray Hysteresis 030104 developmental biology Optoelectronics lcsh:Q 0210 nano-technology business |
Zdroj: | Nature Communications, Vol 11, Iss 1, Pp 1-9 (2020) Nature communications, vol 11, iss 1 |
ISSN: | 2041-1723 |
Popis: | Two-dimensional (2D) Ruddlesden-Popper perovskites are currently drawing significant attention as highly-stable photoactive materials for optoelectronic applications. However, the insulating nature of organic ammonium layers in 2D perovskites results in poor charge transport and limited performance. Here, we demonstrate that Al2O3/2D perovskite heterostructure can be utilized as photoactive dielectric for high-performance MoS2 phototransistors. The type-II band alignment in 2D perovskites facilitates effective spatial separation of photo-generated carriers, thus achieving ultrahigh photoresponsivity of >108 A/W at 457 nm and >106 A/W at 1064 nm. Meanwhile, the hysteresis loops induced by ionic migration in perovskite and charge trapping in Al2O3 can neutralize with each other, leading to low-voltage phototransistors with negligible hysteresis and improved bias stress stability. More importantly, the recombination of photo-generated carriers in 2D perovskites depends on the external biasing field. With an appropriate gate bias, the devices exhibit wavelength-dependent constant photoresponsivity of 103–108 A/W regardless of incident light intensity. Designing high-performance photodetectors based on hybrid perovskites remains a challenge. Here, the authors demonstrate that Al2O3/2D perovskite heterostructure can be utilized as photoactive dielectric for high-performance MoS2 phototransistors with broadband photoresponse, high photogain and reliability operation. |
Databáze: | OpenAIRE |
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