Characterization and Modeling of SiC MOSFETs Turn On in a Half Bridge Converter
| Autor: | Giacomo Scelba, Massimo Nania, Giuseppe Scarcella, Angelo Giuseppe Sciacca, Mario Cacciato, Luciano Salvo, Mario Pulvirenti |
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| Rok vydání: | 2019 |
| Předmět: |
Turn on model
Double pulse test InverterModelling Silicon Carbide Transconductance Transfer characteristic Turn on model Silicon Carbide Computer science Transconductance 05 social sciences Double pulse test 020207 software engineering Topology (electrical circuits) 02 engineering and technology InverterModelling chemistry.chemical_compound Printed circuit board chemistry 0202 electrical engineering electronic engineering information engineering Silicon carbide Electronic engineering Range (statistics) Inverter Transfer characteristic 0501 psychology and cognitive sciences Power semiconductor device Transient (oscillation) 050107 human factors |
| Zdroj: | 2019 IEEE Energy Conversion Congress and Exposition (ECCE). |
| DOI: | 10.1109/ecce.2019.8912215 |
| Popis: | The main aim of this paper is to provide an analytical model of the turn on transient behaviour of Silicon Carbide (SiC) MOSFETs used in a half bridge converter topology. The model includes the high frequency parasitic elements of PCB board, bus-bar, device packaging, in order to provide a very accurate prediction of the power devices performance over a wide operating range. A critical issue in the modeling is given by the transconductance profile, which has been determined by using different methods. The proposed modeling approach can be considered a valuable tool to predict electrical stresses in both power devices due to overvoltages and over-currents and is a good trade-off between computational burden and accuracy in the results. The model has been validated by experimental tests confirming the theoretical study. |
| Databáze: | OpenAIRE |
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