Modelling and performance evaluation of Si-NW ISFETmicrosensor
| Autor: | Pierre Temple-Boyer, A. Lale, Jérôme Launay, B. Hajji, H. Madani, N. ayadi |
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| Přispěvatelé: | Ecole Nationale des Sciences Appliquées d'Oujda, Équipe MICrosystèmes d'Analyse (LAAS-MICA), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT) |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Work (thermodynamics)
Materials science business.industry 0206 medical engineering Transistor pH measurement Nanowire Modeling 02 engineering and technology Si-nw-ChemFET 020601 biomedical engineering Signal Chemical field-effect transistor law.invention [SPI]Engineering Sciences [physics] Reliability (semiconductor) gate all-around law Optoelectronics silicon nanowire ISFET [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics business Communication channel |
| Zdroj: | 2020 International Conference on Electrical and Information Technologies (ICEIT) 2020 International Conference on Electrical and Information Technologies (ICEIT), Mar 2020, Rabat, Morocco. pp.1-5, ⟨10.1109/ICEIT48248.2020.9113203⟩ |
| Popis: | International audience; Compared to the conventional ISFET device, the silicon nanowire ion-sensitive field-effect transistors sensors (Si-nw-ISFET) has attracted a lot of attention andis considered as one of the most promising candidates because of their biocompatibility, very high surface-to-volume ratiodue to the very small sizes of the nanowires, fast response, and good reliability of the signal. This paper deals with the modeling and performance evaluation of Si-nw-ISFET(Silicon-nanowire chemical fieldfield effect transistor) microsensor. The modeling approach used in this work takes into account the nanowire size effects to evaluate the response of Si-nw-ISSFET transistor and introduces two parameters: the total resistance of nanowire RT and the rectangular capacity Cox of the gate insulator all-around the Si-nw. This model investigate the main influential parameters of nanowire on the sensor response as: (i) different wire lengths Lnw, (ii) channel gate lengths of Si-nw-ISFET ( i.e. short and large gate length) and (iii) different numbers of parallel wires. The model developedis tested on large pH range, evidencinga good fit between simulation and experimental results.The model developed can predict the Si-nw-ISFET response behaviour and creates new opportunities for new innovative applications. |
| Databáze: | OpenAIRE |
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